ConfigurationChannelVDS (V)VGS (V)rDS(on) @ 10 V (Ohms)rDS(on) @ 4.5 V (Ohms)rDS(on) @ 2.5 V (Ohms)rDS(on) @ 1.8 V (Ohms)Qg @ 10 V (nC)Qg @ 4.5 V (nC)Qgs (nC)Qgd (nC)ID Max. (A)PD Max. (W)VGS(th)Rg Typ.SINGLEP-1280.00850.01060.014749199.51.50.4
SI6423DQ |
RFQ for SI6423DQ |
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| Product | Manufacturers | Pack | D/C | ||||||||||||||||
| SI6423DQ | - | 06+ | TSSOP-8 |
Typical Application |
Features |
| Load Switch | TrenchFET® Power MOSFET |
| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -12 | V | ||
| Gate-Source Voltage | VGS | ±8 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -9.5 | -8.2 | A |
| TA = 70 | -8 | -6.5 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | -30 | |||
| Continuous Source Current (Diode Conduction)a | IS | -1.35 | -0.95 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 1.5 | 1.05 | W |
| TA = 70 | 1.0 | 0.67 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||